{"title":"掺n石墨烯光电探测器的光伏响应","authors":"Wenrong Wang, Tie Li, Yuelin Wang","doi":"10.1109/NEMS.2012.6196714","DOIUrl":null,"url":null,"abstract":"In this paper, photovoltaic response has been found in an N-doped graphene based photodetector with metal-graphene-metal structure. Raman and XPS spectra indicate that nitrogen atoms are doped into the graphene after synthesized in a CVD system by introducing CH4 and NH3. With the semiconducting behavior of I-V curves, N-doping graphene exhibits an opened band-gap, which generates photocurrent under light excitation.","PeriodicalId":156839,"journal":{"name":"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Photovoltaic response of N-doped graphene-based photodetector\",\"authors\":\"Wenrong Wang, Tie Li, Yuelin Wang\",\"doi\":\"10.1109/NEMS.2012.6196714\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, photovoltaic response has been found in an N-doped graphene based photodetector with metal-graphene-metal structure. Raman and XPS spectra indicate that nitrogen atoms are doped into the graphene after synthesized in a CVD system by introducing CH4 and NH3. With the semiconducting behavior of I-V curves, N-doping graphene exhibits an opened band-gap, which generates photocurrent under light excitation.\",\"PeriodicalId\":156839,\"journal\":{\"name\":\"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2012.6196714\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2012.6196714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photovoltaic response of N-doped graphene-based photodetector
In this paper, photovoltaic response has been found in an N-doped graphene based photodetector with metal-graphene-metal structure. Raman and XPS spectra indicate that nitrogen atoms are doped into the graphene after synthesized in a CVD system by introducing CH4 and NH3. With the semiconducting behavior of I-V curves, N-doping graphene exhibits an opened band-gap, which generates photocurrent under light excitation.