J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, K. Kyuma
{"title":"一种三层结构GaAs/AlGaAs光学神经芯片的新方法","authors":"J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, K. Kyuma","doi":"10.1109/IJCNN.1989.118285","DOIUrl":null,"url":null,"abstract":"A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported. It consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated in a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported. The fabricated device can simulate a 32-neuron system. The experimental results for a Hopfield associative memory with three stored vectors are described.<<ETX>>","PeriodicalId":199877,"journal":{"name":"International 1989 Joint Conference on Neural Networks","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A new approach to a GaAs/AlGaAs optical neurochip with three layered structure\",\"authors\":\"J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, K. Kyuma\",\"doi\":\"10.1109/IJCNN.1989.118285\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported. It consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated in a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported. The fabricated device can simulate a 32-neuron system. The experimental results for a Hopfield associative memory with three stored vectors are described.<<ETX>>\",\"PeriodicalId\":199877,\"journal\":{\"name\":\"International 1989 Joint Conference on Neural Networks\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International 1989 Joint Conference on Neural Networks\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IJCNN.1989.118285\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International 1989 Joint Conference on Neural Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IJCNN.1989.118285","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new approach to a GaAs/AlGaAs optical neurochip with three layered structure
A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported. It consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated in a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported. The fabricated device can simulate a 32-neuron system. The experimental results for a Hopfield associative memory with three stored vectors are described.<>
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