{"title":"有机薄膜晶体管的解析模型","authors":"Ling Li, H. Kosina","doi":"10.1109/EDSSC.2005.1635337","DOIUrl":null,"url":null,"abstract":"An analytical model that describes the DC characteristics of organic thin film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. As verified by published data, the model provides an accurate and efficient prediction for transfer characteristics and output characteristics of OTFT via simple formulations.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"An analytical model for organic thin film transistors\",\"authors\":\"Ling Li, H. Kosina\",\"doi\":\"10.1109/EDSSC.2005.1635337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical model that describes the DC characteristics of organic thin film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. As verified by published data, the model provides an accurate and efficient prediction for transfer characteristics and output characteristics of OTFT via simple formulations.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analytical model for organic thin film transistors
An analytical model that describes the DC characteristics of organic thin film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. As verified by published data, the model provides an accurate and efficient prediction for transfer characteristics and output characteristics of OTFT via simple formulations.