IGBT和SiC功率模块的近磁场发射分析

2020 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMCSI) Pub Date : 2020-07-01 DOI:10.1109/EMCSI38923.2020.9191684

Boyi Zhang, H Zhao, Shuo Wang

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引用次数: 4

摘要

具有igbt和SiC mosfet等高速功率器件的功率模块已成为中大功率应用的关键部件。然而，它们更快的开关速度和紧凑的设计引起了近磁场发射问题。高速电源模块的近磁场会污染外围电路和滤波器。本文对三种功率模块的近磁场发射进行了分析。确定了近磁发射的根本原因和来源。在此基础上，对近磁场进行了预测，并通过有限元仿真和测量进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Near Magnetic Field Emission Analysis for IGBT and SiC Power Modules

Power modules with high-speed power devices such as IGBTs and SiC MOSFETs have become crucial components of medium to high power applications. However, their faster switching speed and compact design raise near magnetic field emission issues. The near magnetic field from the high-speed power modules could contaminate the peripheral circuits and filters. In this paper, the near magnetic field emission is analyzed for three power modules. The root cause and sources of the near magnetic emission are identified. Based on the analysis, the near magnetic field is predicted and verified with finite element analysis (FEA) simulation and measurement.

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来源期刊

2020 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (EMCSI)

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