砷化镓的可靠性研究,vol . 32 (p .37)领导的

K. Pommer
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引用次数: 1

摘要

采用加速寿命测试技术,对密封GaAsP LED的长寿命和可靠性特性进行了全面研究。建立了基于Arrhenius方程的退化模型,该模型描述了对数正态失效分布。扩展的longini失效机制被扩展到包括晶体位错的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliability Study of GaAs, 63P.37 LED'S
A comprehensive study of the long life and reliability characteristics of a hermetically sealed GaAsP LED has been performed using accelerated life test techniques. A degradation model was developed based on the Arrhenius equation which was found to describe a lognormal failure distribution. The Extended-Longini failure mechanism was expanded to include the effects of crystalline dislocations.
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