使用标准晶圆片制造能够进行TEM测量的电线宽结构

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766208

C. Munro, A. Gundlach, J. Stevenson, D. W. Travis, S. Smith, N. Rankin, A. Walton

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引用次数: 1

摘要

本文详细介绍了在蚀刻窗口上制造电线宽结构的工艺，以便可以用TEM检查它们。这些ELISTEMs (TEM的电气线宽结构)是使用标准硅片制造的。测量结果与传统线宽结构的测量结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The fabrication of electrical linewidth structures capable of TEM measurement using standard <100> wafers

This paper presents details of a process for fabricating electrical linewidth structures over etched windows so that they potentially can be inspected with a TEM. These ELISTEMs (electrical linewidth structures for TEM) are fabricated using standard <100> silicon wafers. Measurements are compared with those obtained for conventional linewidth structures.

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ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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