基于90nm CMOS的0.9V 5kS/s电阻的时域温度传感器，校准精度为- 0.6°C/0.8°C，范围为- 40°C至125°C

2013 IEEE Asian Solid-State Circuits Conference (A-SSCC) Pub Date : 2013-12-23 DOI:10.1109/ASSCC.2013.6691009

Xian Tang, K. Pun, W. Ng

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引用次数: 12

摘要

本文提出了一种以电阻为传感元件，进行时域数字化的新型低压温度传感器。该传感器采用90nm CMOS制造，在-40°C~125°C范围内测量误差为-0.6°C/0.8°C，在25°C和45°C下进行两点校准后，峰值电源灵敏度为4°C/V。在0.9V电源下，采样率为5kS/s，功耗为11.8μW。

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A 0.9V 5kS/s resistor-based time-domain temperature sensor in 90nm CMOS with calibrated inaccuracy of −0.6°C/0.8°C from −40°C to 125°C

This paper presents a new low-voltage temperature sensor which uses resistor as the sensing element and digitizes in time domain. Fabricated in 90nm CMOS, the sensor measures an inaccuracy of -0.6°C/0.8°C over -40°C~125°C range and a peak supply sensitivity of 4°C/V after two-point calibration at 25°C and 45°C. It dissipates 11.8μW at a sampling rate of 5kS/s from a 0.9V supply.

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2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)

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