一种300mm可变硅厚度的铸造HRSOI技术，用于集成FEM应用

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838031

Rui Tze Toh, Shyam Parthasarathy, T. Sun, Shaoqiang Zhang, Raj Verma Purakh, Chao Song Zhu, Venkata Sudheer Nune, J. S. Wong, M. Govindarajan, Y. K. Yoo, K. Chew, D. Ang

{"title":"一种300mm可变硅厚度的铸造HRSOI技术，用于集成FEM应用","authors":"Rui Tze Toh, Shyam Parthasarathy, T. Sun, Shaoqiang Zhang, Raj Verma Purakh, Chao Song Zhu, Venkata Sudheer Nune, J. S. Wong, M. Govindarajan, Y. K. Yoo, K. Chew, D. Ang","doi":"10.1109/IEDM.2016.7838031","DOIUrl":null,"url":null,"abstract":"A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and fT >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 300mm foundry HRSOI technology with variable silicon thickness for integrated FEM applications\",\"authors\":\"Rui Tze Toh, Shyam Parthasarathy, T. Sun, Shaoqiang Zhang, Raj Verma Purakh, Chao Song Zhu, Venkata Sudheer Nune, J. S. Wong, M. Govindarajan, Y. K. Yoo, K. Chew, D. Ang\",\"doi\":\"10.1109/IEDM.2016.7838031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and fT >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838031\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了一种新的系统级射频前端模块技术集成方法。讨论了实现Ron为1.6 ω -mm、fT >39GHz的一流扩展漏极功率场效应管(EDNMOS)的器件设计。接着分析了一种通过选择性硅薄化集成的高性能开关器件。

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A 300mm foundry HRSOI technology with variable silicon thickness for integrated FEM applications

A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and fT >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.

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来源期刊

2016 IEEE International Electron Devices Meeting (IEDM)

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