基于Ga2O3/n-GaAs的自供电光电探测器

V. Kalygina, O.S. Kisleleva, B. Kushnarev, Y. Petrova, A. V. Almaev, V. Oleinik, A. Tsymbalov
{"title":"基于Ga2O3/n-GaAs的自供电光电探测器","authors":"V. Kalygina, O.S. Kisleleva, B. Kushnarev, Y. Petrova, A. V. Almaev, V. Oleinik, A. Tsymbalov","doi":"10.56761/efre2022.n1-o-027801","DOIUrl":null,"url":null,"abstract":"The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by RF-magnetron sputtering on n-GaAs epitaxial layers with a concentration of Nd = 9.5ˑ1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and voltage-siemens dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. The samples exhibit the properties of a photodiode and are able to work offline when operating on a constant signal. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the bulk of the oxide film.","PeriodicalId":156877,"journal":{"name":"8th International Congress on Energy Fluxes and Radiation Effects","volume":"203 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-powered Photodetectors based on the Ga2O3/n-GaAs\",\"authors\":\"V. Kalygina, O.S. Kisleleva, B. Kushnarev, Y. Petrova, A. V. Almaev, V. Oleinik, A. Tsymbalov\",\"doi\":\"10.56761/efre2022.n1-o-027801\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by RF-magnetron sputtering on n-GaAs epitaxial layers with a concentration of Nd = 9.5ˑ1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and voltage-siemens dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. The samples exhibit the properties of a photodiode and are able to work offline when operating on a constant signal. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the bulk of the oxide film.\",\"PeriodicalId\":156877,\"journal\":{\"name\":\"8th International Congress on Energy Fluxes and Radiation Effects\",\"volume\":\"203 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Congress on Energy Fluxes and Radiation Effects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.56761/efre2022.n1-o-027801\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Congress on Energy Fluxes and Radiation Effects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56761/efre2022.n1-o-027801","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

研究了Ga2O3/n-GaAs结构的电学和光电特性。采用射频磁控溅射技术在n-GaAs外延层上制备了浓度为Nd = 9.5±1014 cm-3的氧化镓薄膜。氧化膜厚度为120 nm。在106 Hz频率下的测量表明,电容-电压和电压-西门子依赖关系由金属-绝缘体-半导体结构的曲线特征描述,并且对λ = 254 nm的辐射表现出低灵敏度。样品表现出光电二极管的特性,并且能够在恒定信号下离线工作。在λ = 254 nm的连续辐射下,探测器的光电特性是由Ga2O3/GaAs界面和氧化膜中高密度的陷阱决定的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-powered Photodetectors based on the Ga2O3/n-GaAs
The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by RF-magnetron sputtering on n-GaAs epitaxial layers with a concentration of Nd = 9.5ˑ1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and voltage-siemens dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. The samples exhibit the properties of a photodiode and are able to work offline when operating on a constant signal. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the bulk of the oxide film.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信