基于fpga的ReRAM表征操作系统

J. Xing, Qingjiang Li, Jiwei Li, Wei Wang, Haijun Liu, Hui Xu
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引用次数: 0

摘要

ReRAM是未来非易失性高密度存储器的一个有前途的候选者,而通用半导体表征仪器的缺乏可能阻碍其电学表征的进展。本文介绍了一种用户友好的基于fpga的表征系统,旨在提供一种强大的工具,以促进独立或交叉排列的多级ReRAM器件的电气性能评估。给出了硬件和软件的详细设计,为类似系统的开发提供设计参考。实验结果表明,在100Ω ~ 1MΩ的电阻范围内,该系统的读出误差最大可达1.5%。此外,该系统还显示了通过采用复杂电阻调谐算法捕获ReRAM器件瞬态变化和操纵交叉棒阵列器件电阻的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An FPGA-based manipulation system for ReRAM characterization
ReRAM is a promising candidate for future nonvolatile high-density memory, while the electrical characterization progress may be hindered by the shortages of general semiconductor characterization instruments. This paper introduces a user-friendly FPGA-based characterization system, aiming to provide a power tool to facilitate electrical property assessments of multi-level ReRAM devices in either standalone or crossbar array. The detail design of the hardware and software is presented for the purpose of providing design references for the developments of similar systems. Experimental results show that the system can achieve maximum 1.5% readout error for resistance range of 100Ω∼1MΩ. Besides, the system also shows its capabilities in capturing the transient change of ReRAM devices and manipulating device resistance in crossbar array by adopting complex resistance tuning algorithm.
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