{"title":"功率半导体器件的建模，问题，限制和未来趋势","authors":"B. Fatemizadeh, P. Lauritzen, D. Siber","doi":"10.1109/CIPE.1996.612346","DOIUrl":null,"url":null,"abstract":"The problems and future trends of the modeling of power devices are reviewed and the different modeling methods compared as to their compromise between convenience, accuracy, numerical efficiency and accuracy in implementing physical effects. Many of the existing power device models are listed, and their main features are identified and compared.","PeriodicalId":126938,"journal":{"name":"5th IEEE Workshop on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Modeling of power semiconductor devices, problems, limitations and future trends\",\"authors\":\"B. Fatemizadeh, P. Lauritzen, D. Siber\",\"doi\":\"10.1109/CIPE.1996.612346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The problems and future trends of the modeling of power devices are reviewed and the different modeling methods compared as to their compromise between convenience, accuracy, numerical efficiency and accuracy in implementing physical effects. Many of the existing power device models are listed, and their main features are identified and compared.\",\"PeriodicalId\":126938,\"journal\":{\"name\":\"5th IEEE Workshop on Computers in Power Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"5th IEEE Workshop on Computers in Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIPE.1996.612346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"5th IEEE Workshop on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1996.612346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of power semiconductor devices, problems, limitations and future trends
The problems and future trends of the modeling of power devices are reviewed and the different modeling methods compared as to their compromise between convenience, accuracy, numerical efficiency and accuracy in implementing physical effects. Many of the existing power device models are listed, and their main features are identified and compared.
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