一种用于高压ESD保护的新型高保持电压双向可控硅

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-12 DOI:10.1109/EDSSC.2019.8754152

Shiyu Song, Feibo Du, Fei Hou, Wenqiang Song, Zhiwei Liu, Jizhi Liu

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引用次数: 4

摘要

本文提出了一种新型的高保持电压双向可控硅(HHV-DDSCR)。利用Sentaurus TCAD软件对HHV-DDSCR和DDSCR(双向SCR)的ESD I-V特性进行了仿真。与DDSCR相比，新型HHV-DDSCR将保持电压从2V大幅提高到14V，并具有相对稳定的触发电压，可为高压ic提供有效的ESD保护。此外，还研究了HHV-DDSCR中寄生BJTs对器件性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New dual directional SCR with high holding voltage for High Voltage ESD protection

In this paper, A novel high holding voltage dual-directional SCR (HHV-DDSCR) is proposed. The ESD I-V characteristics of HHV-DDSCR and DDSCR (dual-directional SCR) are simulated with the Sentaurus TCAD software. Compared with the DDSCR, the new HHV-DDSCR dramatically increases the holding voltage from 2V to 14V with relatively stable trigger voltage, which can provide efficient ESD protection for high voltage (HV) ICs. Besides, the influence of the parasitic BJTs in HHV-DDSCR on the device performance has also been studied.

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来源期刊

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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