A. Agah, Wei Wang, P. Asbeck, L. Larson, J. Buckwalter
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引用次数: 23
摘要
采用45nm SOI CMOS实现了一种新型的堆叠FET数模转换器，该转换器通过I/Q数模转换器(DAC)、I/Q混频器和堆叠FET PA共享直流电流，以提供高输出功率。提出的架构在45GHz的QPSK传输速率为1.25 Gbps。该发射机的饱和输出功率为21.3 dbm，峰值PAE为16%。电路占地0.3 mm2(包括焊盘)，而PAE和Psat在42至47 GHz范围内保持在13%以上和18 dBm。
A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm Psat and 16% PAE in 45-nm SOI CMOS
A novel stacked FET digital-to-RF converter is implemented in 45-nm SOI CMOS, which shares DC current through an I/Q digital-to-analog converter (DAC), I/Q mixer, and stacked-FET PA to provide high output power. The proposed architecture transmits at 1.25 Gbps for QPSK at 45GHz. This transmitter exhibits a 21.3-dBm saturated output power, while achieving a peak PAE of 16%. The circuit occupies 0.3 mm2 including pads, while the PAE and Psat remains above 13% and 18 dBm from 42 to 47 GHz.
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