γ辐照下硅纳米晶须的光学和结构性质

2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2018-09-01 DOI:10.1109/APEDE.2018.8542321

D. Terin, O. Belobrovaya, V. Galushka, V. Sidorov, V. Polyanskaya

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引用次数: 0

摘要

本文研究了用非电流两步刻蚀法制备硅纳米晶须的方法。在未辐照的单晶硅和辐照的γ-量子衬底上制备了硅纳米晶须。在蚀刻时间为20 ~ 50 min时，纳米须的长度与辐射剂量无关(直径为70 ~ 140 nm)，但随着蚀刻时间的增加，纳米须的长度随着辐射剂量的增加而急剧增加。讨论了辐照下硅纳米晶须的光学性质和结构性质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optical and Structural Properties of Silicon Nanowhiskers Under the Influence of γ-Irradiation

The study of the formation of silicon nanowhiskers by the method of non-current two-step etching is presented in this paper. Silicon nanowhiskers were obtained on unirradiated single-crystal silicon and on irradiated γ-quantum substrates. At an etching time of 20 to 50 minutes, the length of nanowhiskers is independent of the radiation dose (with a diameter of 70 to 140 nm), however, with increasing etching time, the length of the nanowhiskers increases sharply with increasing radiation dose. The optical and structural properties of silicon nanowhiskers under the influence of gamma irradiation are discussed.

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2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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