对三元内容可寻址存储器的比较故障进行建模和测试

Jin-Fu Li, Chou-Kun Lin
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引用次数: 5

摘要

本文介绍了基于物理缺陷的tcam故障的比较,如两个电路节点之间的短路和晶体管卡开卡接故障。据此,提出了几种比较故障模型。提出了一种比较故障的类三月测试算法。对于N / sp1倍/ b位TCAM,测试算法只需要4N次写操作、3N次擦除操作和(4N+2B)次比较操作,可以100%覆盖比较故障。与以往的工作相比,本文提出的测试算法对于宽字tcam具有较低的时间复杂度,且时间复杂度与卡故障数无关。此外,该算法可以覆盖导致失败的比较操作的所有缺陷。此外,它可以通过内置自检电路实现,具有较低的面积成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and testing comparison faults for ternary content addressable memories
This paper presents the comparison faults of TCAMs based on physical defects, such as shorts between two circuit nodes and transistor stuck-open and stuck-on faults. Accordingly, several comparison fault models are proposed. A March-like test algorithm for comparison faults is also proposed. The test algorithm only requires 4N Write operations, 3N Erase operations, and (4N+2B) Compare operations to cover 100% comparison faults for an N /spl times/ B-bit TCAM. Compared with the previous work, the proposed test algorithm has lower time complexity for TCAMs with wide words and the time complexity is independent of the number of stuck-on faults. Also, the algorithm can cover all defects that cause a failed Compare operation. Moreover, it can be realized by built-in self-test circuitry with lower area cost.
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