CMOS/SOI晶体管和电路中的瞬态辐射效应

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698938

V. Ferlet-Cavrois, E. Dupont-Nivet, J. Vildeuil, O. Musseau, J. Leray

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引用次数: 6

摘要

本文对CMOS/SOI技术的剂量率硬化进行了评价。采用二维漂移扩散码，对基本晶体管的响应进行了新颖的研究。在SPICE仿真中引入光电流模型来预测复杂电路的灵敏度。仿真结果与实验结果吻合较好。通过仿真推导出了加固电路的简单规则。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transient radiation effects in CMOS/SOI transistors and circuits

The dose rate hardening of a CMOS/SOI technology is evaluated in this paper. The response of elementary transistors is studied with an original method by using a 2D drift-diffusion code. The photocurrent model is introduced in SPICE simulation to predict the sensitivity of complex circuits. A good agreement is observed between simulation and experiment. Simple rules to harden circuits are deduced from simulation.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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