基于28纳米CMOS标准库的TPM嵌入式SOC低功耗设计

Jiebin Su, Shan He, Zhaoqing Yang, Hongyin Luo, Zhixin Zhou, Donghui Guo
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引用次数: 0

摘要

在超低纳米半导体技术时代,集成电路的功耗不仅要考虑单元面积和性能。目前,时钟门控、功率门控和多电压是集成电路中最常用的三种解决方案。然而,单一的低功耗技术已不能满足高集成度SOC(片上系统)的节能要求,特别是在CMOS sub- 28nm技术上。此外,大多数处理器只能管理处理器本身的能力,而无法管理不断增加的用户集成ip(知识产权核心)的能力。本文提出了一种电源管理单元,并将其集成到TPM的嵌入式SOC的低功耗设计中,以降低处理器和用户集成ip的功耗。根据合成工具的报告,该设计采用CMOS 28纳米技术和融合时钟门控、功率门控和多电压技术实现,实现了86.08%的总功耗节约和9.83%的单元面积损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Power Design of Embedded SOC for TPM with Standard Library of 28 nm CMOS
In the ultra-low nanometer semiconductor technology era, power consumption of integrated circuits should be considered as well as cell area and performance. Today, Clock Gating, Power Gating and Multi Voltage are the three most commonly used solutions in integrated circuits. However, single low power technique can not meet requirements of power savings in very high integration SOC (system on chip), especially from CMOS sub-28 nm technology on. Moreover, most of processors could only manage the power of the processors themselves, but could not manage the power of increasing user-integrated Ips (Intellectual Property cores). This paper proposed a power management unit, which has been integrated in low power design of an embedded SOC for TPM, to reduce the power consumption of the processor and user-integrated IPs. The design was implemented with CMOS 28 nm technology and fused Clock Gating, Power Gating and Multi Voltage techniques, achieving 86.08% total power savings and receiving 9.83% cell area penalty according to reports of synthesis tool.
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