热二极管更新

Y. Kucherov, P. Hagelstein, V. Sevastyanenko, S. Guruswamy, H. L. Brown, D. Thimmegowda
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引用次数: 1

摘要

用n*pn结构的p型阻挡层在InSb中构建热二极管的实验表明,在受体浓度和宽度上存在最优值。对不同势垒形状的实验结果表明,三角形势垒优于矩形势垒。在PbTe热二极管中已经证明了增强。在InSb和PbTe二极管中,最佳宽度在散射长度的数量级上,这在两种半导体中是不同的数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Update on thermal diodes
Experiments on thermal diodes in InSb constructed with a p-type blocking layer in an n*pn structure have shown the existence of an optimum in acceptor concentration and width. Results for various potential barrier shapes show that triangle-shaped barriers outperform barriers with rectangular shape. Enhancements have been demonstrated in PbTe thermal diodes. In InSb and in PbTe diodes, the optimum width is on the order of the scattering length, which is different in the two semiconductors by an order of magnitude.
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