{"title":"非晶Si/SiO2多层膜中硅纳米晶的层厚依赖性形成","authors":"K. Chen, Xue Feng, Yidong Huang","doi":"10.1117/12.888342","DOIUrl":null,"url":null,"abstract":"Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.","PeriodicalId":126232,"journal":{"name":"Asia Communications and Photonics Conference and Exhibition","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers\",\"authors\":\"K. Chen, Xue Feng, Yidong Huang\",\"doi\":\"10.1117/12.888342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.\",\"PeriodicalId\":126232,\"journal\":{\"name\":\"Asia Communications and Photonics Conference and Exhibition\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Asia Communications and Photonics Conference and Exhibition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.888342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Asia Communications and Photonics Conference and Exhibition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers
Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.
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