一种150万像素的局部空穴调制成像仪

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992929

T. Miida, K. Kawajiri, H. Terakago, T. Endo, T. Okazaki, S. Yamamoto, A. Nishimura

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引用次数: 7

摘要

一个1.5百万像素的成像仪由一个MOSFET和一个固定的光电二极管组成，像素为4.2 /spl μ /m平方。MOSFET源附近的局部高密度p区将累积的空穴数转换为源电压。低随机噪声，低暗信号，高灵敏度，具有良好的色彩再现性和分辨率。

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A 1.5 Mpixel imager with localized hole-modulation method

A 1.5 Mpixel imager with 4.2 /spl mu/m square pixel is composed of a single MOSFET and a pinned photodiode. A localized high-density p-region near the source of the MOSFET converts the accumulated hole number to source voltage. Low random noise, low dark signal, high sensitivity with good color reproduction and resolution are achieved.

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来源期刊

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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