用于等离子体离子注入的固态Marx型调制器

L. Redondo, F. Cavalcante, H. Canacsinh, M. Pereira, M. R. Gomes, M. R. Silva
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引用次数: 2

摘要

本文介绍了连接到等离子体离子注入(PBII)系统的创新固态Marx型调制器的第一批结果。PBII系统有两个主要目标;支持表面工程研究,协助开发用于等离子体应用的新型脉冲功率调制器。讨论了在离子密度为1011 cm−3、压力为0.1 Pa的氮气气氛中进行的初步试验结果。在垂直放置的金属圆柱体(100 mm × 10 mm)上施加约25µs宽,1 kHz负脉冲,负幅度为~ 10 kV,绘制6 a峰值电流。调制器将等离子体短路限制在每脉冲100 A以内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Solid-state Marx type modulator for Plasma Based Ion Implantation applications
This paper presents the first results of an innovative solid-state Marx type modulator connected to a Plasma Based Ion Implantation (PBII) system. The PBII system has two main objectives; support surface engineering research and assist the development of new pulsed power modulators for plasma applications. The results of preliminary tests done in nitrogen gas atmosphere, with 1011 cm−3 ion density and 0.1 Pa pressure are discussed. About 25 µs width, 1 kHz negative pulses, of ∼10 kV negative amplitude, were applied to a metallic cylinder (100 mm × 10 mm) vertically placed on it, drawing 6 A peak current. The modulator limits the plasma short-circuit up to 100 A per pulse.
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