{"title":"低噪声GaAs mesfet的可靠性研究","authors":"T. Suzuki, M. Otsubo, T. Ishii, K. Shirahata","doi":"10.1109/EUMA.1979.332724","DOIUrl":null,"url":null,"abstract":"Analysis is made with regard to the failure mode of GaAs FETs and cause of the failure is investigated. It is fundamental for improving reliability of GaAs FETs to suppress the localized high electric field and the gate metal migration. The deep gate recess and the thick gate structure and the unsymmetric configuration of the gate location between source and drain are introduced. DC surge pulse capability and the RF input power capability of the improved GaAs FETs are 2 times and more than 5 times, respectively compared with conventional GaAs FETs.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Study on Reliability of Low Noise GaAs MESFETs\",\"authors\":\"T. Suzuki, M. Otsubo, T. Ishii, K. Shirahata\",\"doi\":\"10.1109/EUMA.1979.332724\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Analysis is made with regard to the failure mode of GaAs FETs and cause of the failure is investigated. It is fundamental for improving reliability of GaAs FETs to suppress the localized high electric field and the gate metal migration. The deep gate recess and the thick gate structure and the unsymmetric configuration of the gate location between source and drain are introduced. DC surge pulse capability and the RF input power capability of the improved GaAs FETs are 2 times and more than 5 times, respectively compared with conventional GaAs FETs.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332724\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332724","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis is made with regard to the failure mode of GaAs FETs and cause of the failure is investigated. It is fundamental for improving reliability of GaAs FETs to suppress the localized high electric field and the gate metal migration. The deep gate recess and the thick gate structure and the unsymmetric configuration of the gate location between source and drain are introduced. DC surge pulse capability and the RF input power capability of the improved GaAs FETs are 2 times and more than 5 times, respectively compared with conventional GaAs FETs.
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