基于广义回归神经网络的高效忆阻器建模

Zehra Gulru Cam, S. Cimen, H. Sedef
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引用次数: 1

摘要

随着忆阻器作为未来硬件的潜在组成部分的最新进展,研究忆阻器建模成为一个重要而及时的课题。忆阻器模型对于设计师展示忆阻器的行为是很重要的,因为忆阻器尚未在市场上可用。本文用广义回归神经网络(GRNN)对理想忆阻器进行了重构。数学方程用于一组给定的忆阻器工艺参数,如RON、ROFF、TiO2厚度,并对瞬时忆阻器行为进行建模。该模型的行为与HP实验室和Joglekar的SPICE模型的计算结果一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Generalized regression neural network based efficient memristor modeling
With the recent advances in memristors as a potential building block for future hardware, it becomes an important and timely topic to study on memristor modelling. Memristor models are important for designers to exhibit memristor behavior since memristor is not yet available in market. An ideal memristor behavior has been remodel with Generalized Regression Neural Network (GRNN) and presented in this paper. Mathematical equations are used with a set of given memristor process parameters such as RON, ROFF, thickness of TiO2, and instantaneous memristor behaviour is modelled. The behavior of this model is in agreement with the calculations of HP Lab's and Joglekar's SPICE model.
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