M. Madihian, L. Desclos, K. Maruhashi, K. Onda, M. Kuzuhara
{"title":"一种用于毫米波波段无线网络的高速谐振型场效应晶体管收发开关","authors":"M. Madihian, L. Desclos, K. Maruhashi, K. Onda, M. Kuzuhara","doi":"10.1109/EUMA.1996.337731","DOIUrl":null,"url":null,"abstract":"This paper concerns with the design consideration, fabrication process, and performance of a CPW monolithic AlGaAs/InGaAs HJFET switch for V-band wireless networks applications. The Switch utilizes a resonance concept in order to either pass, or to block a signal by presenting, respectively, a parallel, or a series resonant circuit to the signal. A developed T/R switch exhibits state-of the art switching-speed and isolation of 250psec and 41dB, respectively, and an insertion loss of 3.9dB ovr V-band frequencies.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A high-speed resonance-type FET transceiver switch for millimeter-wave band wireless network\",\"authors\":\"M. Madihian, L. Desclos, K. Maruhashi, K. Onda, M. Kuzuhara\",\"doi\":\"10.1109/EUMA.1996.337731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper concerns with the design consideration, fabrication process, and performance of a CPW monolithic AlGaAs/InGaAs HJFET switch for V-band wireless networks applications. The Switch utilizes a resonance concept in order to either pass, or to block a signal by presenting, respectively, a parallel, or a series resonant circuit to the signal. A developed T/R switch exhibits state-of the art switching-speed and isolation of 250psec and 41dB, respectively, and an insertion loss of 3.9dB ovr V-band frequencies.\",\"PeriodicalId\":219101,\"journal\":{\"name\":\"1996 26th European Microwave Conference\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 26th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1996.337731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 26th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1996.337731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-speed resonance-type FET transceiver switch for millimeter-wave band wireless network
This paper concerns with the design consideration, fabrication process, and performance of a CPW monolithic AlGaAs/InGaAs HJFET switch for V-band wireless networks applications. The Switch utilizes a resonance concept in order to either pass, or to block a signal by presenting, respectively, a parallel, or a series resonant circuit to the signal. A developed T/R switch exhibits state-of the art switching-speed and isolation of 250psec and 41dB, respectively, and an insertion loss of 3.9dB ovr V-band frequencies.