DMOS单元几何形状对高压功率mosfet集成电流传感器的影响

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509478

R. Zhu, T. P. Chow

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引用次数: 2

摘要

集成电流传感功率MOSFET用于电力电子领域，实现系统控制、保护和诊断功能。本文将集成电流感测功率mosfet与方形(SQ)和原子晶格布局(ALL)设计进行了比较。结果表明，ALL设计比SQ单元设计提供了更好的性能。

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The effect of DMOS cell geometry on the integrated current sensors of high-voltage power MOSFETs

The integrated current-sensing power MOSFET is used in power electronics to implement system control, protective and diagnostic function. This paper compares integrated current-sensing power MOSFETs with the square (SQ) and atomic-lattice-layout (ALL) design. It is shown that the ALL design offers better performance than that with the SQ cell design.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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