超薄晶圆技术中新型铜金属化发射极控制二极管:设定性能基准

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988941

F. Rodriguez, D. Schloegl, F. Hille, P. Brandt, M. Pfaffenlehner, A. Stegner, A. Haertl

{"title":"超薄晶圆技术中新型铜金属化发射极控制二极管:设定性能基准","authors":"F. Rodriguez, D. Schloegl, F. Hille, P. Brandt, M. Pfaffenlehner, A. Stegner, A. Haertl","doi":"10.23919/ISPSD.2017.7988941","DOIUrl":null,"url":null,"abstract":"Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Novel emitter controlled diode with copper metallization in ultrathin wafer technology: Setting a performance benchmark\",\"authors\":\"F. Rodriguez, D. Schloegl, F. Hille, P. Brandt, M. Pfaffenlehner, A. Stegner, A. Haertl\",\"doi\":\"10.23919/ISPSD.2017.7988941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文给出了一种厚度减小、铜金属化的新型自由旋转二极管的电学表征结果(如柔软度、宇宙射线硬度、浪涌电流)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel emitter controlled diode with copper metallization in ultrathin wafer technology: Setting a performance benchmark

Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown.

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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