{"title":"耗尽型MOSFET器件在同步整流中的应用","authors":"R. Blanchard, Phillip E. Thibodeau","doi":"10.1109/PESC.1986.7415549","DOIUrl":null,"url":null,"abstract":"This paper examines the properties of a new power MOSFET operating as a depletion-mode device and used as a synchronous rectifier in a low-voltage, current-mode-control PWM switching regulator. The performance of this device is compared to both a Schottky diode and an enhancement-mode power MOSFET. A comparison of the efficiencies obtained for the three cases is presented.","PeriodicalId":164857,"journal":{"name":"1986 17th Annual IEEE Power Electronics Specialists Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Use of depletion mode MOSFET devices in synchronous rectification\",\"authors\":\"R. Blanchard, Phillip E. Thibodeau\",\"doi\":\"10.1109/PESC.1986.7415549\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper examines the properties of a new power MOSFET operating as a depletion-mode device and used as a synchronous rectifier in a low-voltage, current-mode-control PWM switching regulator. The performance of this device is compared to both a Schottky diode and an enhancement-mode power MOSFET. A comparison of the efficiencies obtained for the three cases is presented.\",\"PeriodicalId\":164857,\"journal\":{\"name\":\"1986 17th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 17th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1986.7415549\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 17th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1986.7415549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Use of depletion mode MOSFET devices in synchronous rectification
This paper examines the properties of a new power MOSFET operating as a depletion-mode device and used as a synchronous rectifier in a low-voltage, current-mode-control PWM switching regulator. The performance of this device is compared to both a Schottky diode and an enhancement-mode power MOSFET. A comparison of the efficiencies obtained for the three cases is presented.