介电微波表征的SU-8厚树脂用于上述IC工艺

A. Ghannam, C. Viallon, D. Bourrier, T. Parra
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引用次数: 48

摘要

提出了一种基于微带线的测量介质电性能的宽带技术。相对介电常数和损耗正切由s参数测量和解析方程计算。解析计算可以直接使用Bahl公式导出的方程,也可以使用Jensen-Hammerstad公式和高效的割线算法进行迭代。为了提取SU-8树脂的介电性能,制备了薄膜微带传输线。相对介电常数为2.85,损耗正切为0.04。这些值用于EM模拟器,用于设计基于SU-8的高q电感器,该电感器实现在低电阻率硅衬底上。测量和仿真之间的良好一致性验证了表征过程,并确认了SU8在高达15 GHz的应用中的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dielectric microwave characterization of the SU-8 thick resin used in an above IC process
A broadband technique for determining electrical properties of dielectric materials is presented, based on microstrip lines. Relative permittivity and loss tangent are computed from S-parameter measurements and analytical equations. The analytical computation is either direct by using equations derived from Bahl formulas, or iterative by using Jensen-Hammerstad formulas coupled with the efficient secant algorithm. Thin film microstrip transmission lines have been fabricated for the extraction of dielectric electrical properties of SU-8 resin. A relative dielectric constant of 2.85 and a loss tangent of 0.04 were determined. These values are used in an EM simulator for the design of an SU-8 based High-Q inductor implemented on a low resistivity silicon substrate. The good agreement between measurements and simulations validates the characterization procedure and confirms the relevance of SU8 for applications up to 15 GHz.
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