CMOS图像传感器读出链中时间噪声的分析与降低方法

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8705719

Jingwei Wei, Dongmei Li, Jingxuan Qiao, Lixin Zhao

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引用次数: 0

摘要

本文分析了CMOS图像传感器读出链中的时间噪声。讨论了列电容对输入参考噪声的影响，因为列电容对列电路的面积有很大的贡献。在此基础上，提出了一种新的手机CMOS图像传感器的低噪声设计方法。通过在像素阵列中采用MOM电容，有效地减小了列读出电路的面积。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis and a Reduction Method of Temporal Noise in the CMOS Image Sensor Readout Chain

This paper analyzes temporal noise in the CMOS image sensor readout chain. The impact of column capacitors on input-referred noise is discussed as the column capacitors make a major contribution to the area of column circuits. Based on the analysis, a new low-noise design method for CMOS image sensors of cellphones is proposed. By implementing MOM capacitors in the pixel array, the area of column readout circuits is effectively reduced.

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2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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