一种采用40nm CMOS的146-173GHz宽带推推式压控振荡器

Shaowei Meng, Lei‐jun Xu, Zhenhua Sun
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引用次数: 0

摘要

本文设计了一种40nm CMOS工艺的太赫兹宽带推推式压控振荡器(VCO)。为了实现宽调谐范围,本文提出的宽带压控振荡器采用开关电容阵列实现。通过将无源电容连接在交叉耦合对的晶体管之间,提高了振荡器的输出功率。仿真结果表明,在电源电压为0.9V时,该压控振荡器在146GHz ~ 173GHz范围内的调谐范围为16.8%。该VCO在160GHz时的输出功率为3.01dBm,在1MHz偏移时的相位噪声为- 89dBc/Hz。含测试垫的压控振荡器芯片尺寸小,为380×380 μm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 146-173GHz Wideband Push-Push VCO in 40nm CMOS
In this paper, a THz wideband push-push voltage-controlled oscillator (VCO) in 40nm CMOS process is designed. To achieve the wide tuning range, the proposed wideband VCO is realized by switched capacitor array. By applying passive capacitor connected between the transistors in cross coupled pair, the output power of the oscillator is improved. The simulated results show that the VCO has the tuning range of 16.8% from 146GHz to 173GHz with a supply voltage of 0.9V. The output power of the proposed VCO is 3.01dBm at 160GHz and the phase noise is −89dBc/Hz at 1MHz offset. Small chip size of the VCO including testing pads is 380×380 μm2.
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