具有电流复用和感应源退化的RF CMOS级联LNA

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) Pub Date : 2001-08-14 DOI:10.1109/MWSCAS.2001.986314

H. Fouad, K. Sharaf, E. El-Diwany, H. El-Hennawy

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引用次数: 24

摘要

提出了一种采用电流复用技术(CRT)的射频CMOS低噪声放大器(LNA)，在不增加功耗的情况下提高了放大器的跨导。采用0.5 /spl mu/m CMOS MOSIS工艺对电路进行了仿真设计。在1ghz时，LNA噪声系数(NF)为2.7 dB，正向增益为21.6 dB，反向隔离为-42.5 dB。LNA的功耗为20.3 mW，电源为2.2 V。

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An RF CMOS cascode LNA with current reuse and inductive source degeneration

An RF CMOS Low-Noise Amplifier (LNA) is proposed using a current reuse technique (CRT) to increase the amplifier transconductance without increasing power dissipation. The circuit was simulated and designed with 0.5 /spl mu/m CMOS MOSIS process. At 1 GHz, the LNA noise figure (NF) is 2.7 dB, forward gain is 21.6 dB and reverse isolation is -42.5 dB. The LNA consumes 20.3 mW from a 2.2 V power supply.

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Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)

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