应变和寄生吸收之间的相互作用揭示了室温下硅兼容锗激光器的最佳途径

2016 IEEE Photonics Conference (IPC) Pub Date : 2016-10-01 DOI:10.1109/IPCON.2016.7830992

Shashank Gupta, J. Petykiewicz, D. Nam, D. Sukhdeo, J. Vučković, K. Saraswat

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引用次数: 0

摘要

通过广泛的模拟和实验证明了锗(Ge)中寄生吸收与应变的戏剧性和以前被忽视的相互作用。单轴应变为4-5%，双轴应变大于1%是室温锗激光器的最佳候选材料。

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Remarkable interplay between strain and parasitic absorption unravelling the best route for Si-compatible Germanium laser at room temperature

A dramatic and previously overlooked interaction of parasitic absorption with strain in germanium (Ge) is demonstrated through extensive simulations and experiments. Uniaxial strain of 4–5% and biaxial strain greater than 1% are the best candidates for a room temperature Ge laser.

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2016 IEEE Photonics Conference (IPC)

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