基于静态电源电流写入操作的CMOS SRAM测试

M. Hashizume, K. Taga, T. Koyama, T. Tamesada
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引用次数: 2

摘要

当数据写入CMOS SRAM IC时,会有大量mA阶的静态电源电流流过。本文讨论了是否可以通过测量写入操作中产生的静态电源电流而不是输出逻辑值来检测不能产生预期输出的故障CMOS SRAM IC。提出了一种基于电源电流的故障检测方法,并通过实验进行了验证。该方法通过少量测试输入检测实验中使用的62%的故障CMOS SRAM ic。此外,如果将该方法用作功能测试的预测试方法,则可以减少总测试时间。这些结果表明,可以通过测量写入操作中的电源电流来检测故障的CMOS SRAM ic。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS SRAM test based on quiescent supply current in write operation
A large quiescent supply current of mA order flows when a data is written in a CMOS SRAM IC. In this paper, we discuss whether faulty CMOS SRAM ICs, which can not produce the expected outputs, can be detected by measuring quiescent supply currents generated in write operations instead of output logic values. A fault detection method based on the supply current is proposed and is evaluated by some experiments. The method detects 62% of the faulty CMOS SRAM ICs used in the experiments with a small number of test inputs. Also, the total test time can be reduced if the method is used as a pretest method of functional testing. These results suggest that faulty CMOS SRAM ICs can be detected by measuring the supply currents in write operations.
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