{"title":"900/1900兆赫频带可切换CMOS功率放大器","authors":"S. Hamidi, D. Dawn","doi":"10.1109/IMaRC45935.2019.9118692","DOIUrl":null,"url":null,"abstract":"This paper presents a band-switchable RF power amplifier (PA) fully-integrated in 130nm CMOS process. A two-stage power amplifier with switchable input and output matching networks is designed in order to tune the center frequency in use. The proposed CMOS PA can operate at 900MHz and 1900MHz as lower and higher operating bands, respectively. Thus, Long Term Evolutionadvanced (LTE-a) and quad-band GSM standards for cellular applications can be covered. As a result, the designed band-switchable power amplifier obtains small-signal gain (S21) of 31.2dB/32.0dB, saturated output power (Psat) of 22.72dBm/ 23.36dBm, and power added efficiency (PAE) of 23.0%/ 26.5% at the lower and higher frequency bands, respectively, showing promising advancement compared to the state-of-the-art.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 900/1900-MHz Band-Switchable CMOS Power Amplifier\",\"authors\":\"S. Hamidi, D. Dawn\",\"doi\":\"10.1109/IMaRC45935.2019.9118692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a band-switchable RF power amplifier (PA) fully-integrated in 130nm CMOS process. A two-stage power amplifier with switchable input and output matching networks is designed in order to tune the center frequency in use. The proposed CMOS PA can operate at 900MHz and 1900MHz as lower and higher operating bands, respectively. Thus, Long Term Evolutionadvanced (LTE-a) and quad-band GSM standards for cellular applications can be covered. As a result, the designed band-switchable power amplifier obtains small-signal gain (S21) of 31.2dB/32.0dB, saturated output power (Psat) of 22.72dBm/ 23.36dBm, and power added efficiency (PAE) of 23.0%/ 26.5% at the lower and higher frequency bands, respectively, showing promising advancement compared to the state-of-the-art.\",\"PeriodicalId\":338001,\"journal\":{\"name\":\"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMaRC45935.2019.9118692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC45935.2019.9118692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 900/1900-MHz Band-Switchable CMOS Power Amplifier
This paper presents a band-switchable RF power amplifier (PA) fully-integrated in 130nm CMOS process. A two-stage power amplifier with switchable input and output matching networks is designed in order to tune the center frequency in use. The proposed CMOS PA can operate at 900MHz and 1900MHz as lower and higher operating bands, respectively. Thus, Long Term Evolutionadvanced (LTE-a) and quad-band GSM standards for cellular applications can be covered. As a result, the designed band-switchable power amplifier obtains small-signal gain (S21) of 31.2dB/32.0dB, saturated output power (Psat) of 22.72dBm/ 23.36dBm, and power added efficiency (PAE) of 23.0%/ 26.5% at the lower and higher frequency bands, respectively, showing promising advancement compared to the state-of-the-art.
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