{"title":"石墨烯/SiO2/Si(n)基金属-绝缘体-半导体太阳能电池的建模","authors":"Muhammad Johirul Islam, Md. Mahmudul Hasan, Rifat Sami, Md. Iqbal Bahar Chowdhury","doi":"10.1109/ICDRET.2016.7421491","DOIUrl":null,"url":null,"abstract":"In this work a graphene based MIS structure for solar energy conversion has been modeled and analyzed. The MIS structure is formed by inserting an oxide layer in the conventional graphene/n-Si Schottky structure to obtain improved performance. Simulation of the model for this MIS structure shows this performance improvement. Using the simulation results this work also analyzes the effects of semiconductor layer width and semiconductor doping level on the current-voltage characteristics.","PeriodicalId":365312,"journal":{"name":"2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of graphene/SiO2/Si(n) based metal-insulator-semiconductor solar cells\",\"authors\":\"Muhammad Johirul Islam, Md. Mahmudul Hasan, Rifat Sami, Md. Iqbal Bahar Chowdhury\",\"doi\":\"10.1109/ICDRET.2016.7421491\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work a graphene based MIS structure for solar energy conversion has been modeled and analyzed. The MIS structure is formed by inserting an oxide layer in the conventional graphene/n-Si Schottky structure to obtain improved performance. Simulation of the model for this MIS structure shows this performance improvement. Using the simulation results this work also analyzes the effects of semiconductor layer width and semiconductor doping level on the current-voltage characteristics.\",\"PeriodicalId\":365312,\"journal\":{\"name\":\"2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-02-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDRET.2016.7421491\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 4th International Conference on the Development in the in Renewable Energy Technology (ICDRET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDRET.2016.7421491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of graphene/SiO2/Si(n) based metal-insulator-semiconductor solar cells
In this work a graphene based MIS structure for solar energy conversion has been modeled and analyzed. The MIS structure is formed by inserting an oxide layer in the conventional graphene/n-Si Schottky structure to obtain improved performance. Simulation of the model for this MIS structure shows this performance improvement. Using the simulation results this work also analyzes the effects of semiconductor layer width and semiconductor doping level on the current-voltage characteristics.