Sung-Ku Yeo, Jong-Hoon Chun, Kyoung-Min Kim, J. Yook, Young-Se Kwon
{"title":"采用选择性阳极氧化铝基板的x波段大功率放大器模块封装","authors":"Sung-Ku Yeo, Jong-Hoon Chun, Kyoung-Min Kim, J. Yook, Young-Se Kwon","doi":"10.1109/EMICC.2007.4412774","DOIUrl":null,"url":null,"abstract":"In this paper, we made a high power amplifier module package using a selectively anodized aluminum substrate for the X-band radar T/R modules. The proposed solution of package is based on thick anodized aluminum oxide (Al2O3) layers and power chips mounted on aluminum for an effective heat sink. The fabricated high power amplifier module has a maximum output power of 39.49 dBm and maximum gain of 32 dB over 9-10 GHz frequency band. This package method can be further contributed to decreasing cost, reducing module size and managing thermal problem for the microwave high power T/R modules.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"An X-band high power amplifier module package using selectively anodized aluminum substrate\",\"authors\":\"Sung-Ku Yeo, Jong-Hoon Chun, Kyoung-Min Kim, J. Yook, Young-Se Kwon\",\"doi\":\"10.1109/EMICC.2007.4412774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we made a high power amplifier module package using a selectively anodized aluminum substrate for the X-band radar T/R modules. The proposed solution of package is based on thick anodized aluminum oxide (Al2O3) layers and power chips mounted on aluminum for an effective heat sink. The fabricated high power amplifier module has a maximum output power of 39.49 dBm and maximum gain of 32 dB over 9-10 GHz frequency band. This package method can be further contributed to decreasing cost, reducing module size and managing thermal problem for the microwave high power T/R modules.\",\"PeriodicalId\":436391,\"journal\":{\"name\":\"2007 European Microwave Integrated Circuit Conference\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2007.4412774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An X-band high power amplifier module package using selectively anodized aluminum substrate
In this paper, we made a high power amplifier module package using a selectively anodized aluminum substrate for the X-band radar T/R modules. The proposed solution of package is based on thick anodized aluminum oxide (Al2O3) layers and power chips mounted on aluminum for an effective heat sink. The fabricated high power amplifier module has a maximum output power of 39.49 dBm and maximum gain of 32 dB over 9-10 GHz frequency band. This package method can be further contributed to decreasing cost, reducing module size and managing thermal problem for the microwave high power T/R modules.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
