GaAs衬底上InGaAs/AlGaAs超晶格生长在1.5 /spl mu/m下的电吸收和折射

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496340

Michael C. Y. Chan, E. Li, K. S. Chan

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引用次数: 0

摘要

砷化镓衬底上的高铟浓度In/sub 0.65/Ga/sub 0.35/As/Al/sub 0.33/Ga/sub 0.67/As超晶格可用于调制器和光通信应用。这是由于光纤系统运行的最低损耗1.55 /spl mu/m的最佳波长。研究了吸收系数和折射率随外加电场的变化等光学参数。

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Electro-absorption and refraction at 1.5 /spl mu/m in InGaAs/AlGaAs superlattice growth on GaAs substrate

High indium concentration In/sub 0.65/Ga/sub 0.35/As/Al/sub 0.33/Ga/sub 0.67/As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 /spl mu/m optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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