低k BCB钝化Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As增强模式pHEMTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964392

H. Chiu, Shih-Cheng Yang, Y. Chan

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引用次数: 2

摘要

采用苯并环丁烯(BCB)钝化层制备了高功率增效Al/sub 0.5/Ga/sub 0.5/As/InGaAs增强模式pHEMTs并进行了表征。该钝化技术利用低介电常数(2.7)和低损耗正切(0.0008)的优点，简化了微波功率器件的钝化过程。在这项工作中，我们不仅抑制了漏源击穿电压，而且通过使用BCB钝化层提高了器件在高输入功率摆幅下的功率性能。钝化后的1.0 /spl μ l /m长的栅极phemt比未钝化的栅极phemt表现出更高的非稳态性能。2.4 GHz工作下的最大输出功率为118 mW/mm，线性功率增益为11.1 dB，功率附加效率为60%。这些特性证明了BCB钝化e模phemt在大信号微波功率器件上的巨大应用潜力。

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Low-k BCB passivated Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As enhancement-mode pHEMTs

A high power-added efficiency Al/sub 0.5/Ga/sub 0.5/As/InGaAs enhancement-mode pHEMTs with benzocyclobutene (BCB) passivated layer are fabricated and characterized. This passivation technology takes advantages of the low dielectric permittivity (2.7) and a low loss tangent (0.0008), which simplifies the passivation process for microwave power device. In this work, we not only suppress the drain-source breakdown voltage but also improve the device power performance under a high input power swing by using a BCB passivation layer. The passivated 1.0 /spl mu/m-long gate pHEMTs exhibit a higher off-state performance than unpassivated ones. The maximum output power under a 2.4 GHz operation is 118 mW/mm, with a linear power gain of 11.1 dB, and a power-added efficiency of 60%. These characteristics demonstrate a great potential for BCB passivated E-mode pHEMTs on the large-signal microwave power device applications.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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