低k BCB钝化Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As增强模式pHEMTs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964392

H. Chiu, Shih-Cheng Yang, Y. Chan

{"title":"低k BCB钝化Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As增强模式pHEMTs","authors":"H. Chiu, Shih-Cheng Yang, Y. Chan","doi":"10.1109/GAAS.2001.964392","DOIUrl":null,"url":null,"abstract":"A high power-added efficiency Al/sub 0.5/Ga/sub 0.5/As/InGaAs enhancement-mode pHEMTs with benzocyclobutene (BCB) passivated layer are fabricated and characterized. This passivation technology takes advantages of the low dielectric permittivity (2.7) and a low loss tangent (0.0008), which simplifies the passivation process for microwave power device. In this work, we not only suppress the drain-source breakdown voltage but also improve the device power performance under a high input power swing by using a BCB passivation layer. The passivated 1.0 /spl mu/m-long gate pHEMTs exhibit a higher off-state performance than unpassivated ones. The maximum output power under a 2.4 GHz operation is 118 mW/mm, with a linear power gain of 11.1 dB, and a power-added efficiency of 60%. These characteristics demonstrate a great potential for BCB passivated E-mode pHEMTs on the large-signal microwave power device applications.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low-k BCB passivated Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As enhancement-mode pHEMTs\",\"authors\":\"H. Chiu, Shih-Cheng Yang, Y. Chan\",\"doi\":\"10.1109/GAAS.2001.964392\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high power-added efficiency Al/sub 0.5/Ga/sub 0.5/As/InGaAs enhancement-mode pHEMTs with benzocyclobutene (BCB) passivated layer are fabricated and characterized. This passivation technology takes advantages of the low dielectric permittivity (2.7) and a low loss tangent (0.0008), which simplifies the passivation process for microwave power device. In this work, we not only suppress the drain-source breakdown voltage but also improve the device power performance under a high input power swing by using a BCB passivation layer. The passivated 1.0 /spl mu/m-long gate pHEMTs exhibit a higher off-state performance than unpassivated ones. The maximum output power under a 2.4 GHz operation is 118 mW/mm, with a linear power gain of 11.1 dB, and a power-added efficiency of 60%. These characteristics demonstrate a great potential for BCB passivated E-mode pHEMTs on the large-signal microwave power device applications.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964392\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用苯并环丁烯(BCB)钝化层制备了高功率增效Al/sub 0.5/Ga/sub 0.5/As/InGaAs增强模式pHEMTs并进行了表征。该钝化技术利用低介电常数(2.7)和低损耗正切(0.0008)的优点，简化了微波功率器件的钝化过程。在这项工作中，我们不仅抑制了漏源击穿电压，而且通过使用BCB钝化层提高了器件在高输入功率摆幅下的功率性能。钝化后的1.0 /spl μ l /m长的栅极phemt比未钝化的栅极phemt表现出更高的非稳态性能。2.4 GHz工作下的最大输出功率为118 mW/mm，线性功率增益为11.1 dB，功率附加效率为60%。这些特性证明了BCB钝化e模phemt在大信号微波功率器件上的巨大应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low-k BCB passivated Al/sub 0.5/Ga/sub 0.5/As/In/sub 0.15/Ga/sub 0.85/As enhancement-mode pHEMTs

A high power-added efficiency Al/sub 0.5/Ga/sub 0.5/As/InGaAs enhancement-mode pHEMTs with benzocyclobutene (BCB) passivated layer are fabricated and characterized. This passivation technology takes advantages of the low dielectric permittivity (2.7) and a low loss tangent (0.0008), which simplifies the passivation process for microwave power device. In this work, we not only suppress the drain-source breakdown voltage but also improve the device power performance under a high input power swing by using a BCB passivation layer. The passivated 1.0 /spl mu/m-long gate pHEMTs exhibit a higher off-state performance than unpassivated ones. The maximum output power under a 2.4 GHz operation is 118 mW/mm, with a linear power gain of 11.1 dB, and a power-added efficiency of 60%. These characteristics demonstrate a great potential for BCB passivated E-mode pHEMTs on the large-signal microwave power device applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

自引率

0.00%

发文量