商用sram fpga中α粒子诱导的多重seu对tmr硬化电路的敏感性评估

A. Manuzzato, P. Rech, S. Gerardin, A. Paccagnella, L. Sterpone, M. Violante
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引用次数: 6

摘要

我们提出了基于sram的fpga对α粒子灵敏度的实验分析。我们研究了FPGA内部的不同资源(lut, mux, pip等)如何受到α诱导的seu的影响,评估了控制每个seu的配置存储单元的横截面。然后,我们展示了两个案例研究,一系列FIR滤波器和一系列在FPGA中实现的软微控制器,测量暴露于α粒子恒定通量期间的功能中断率。然后,通过使用单个最终投票人、中间投票人以及最后还包括反馈投票人的三倍来强化设计。讨论了每种强化方案的鲁棒性,分析了作为配置内存中seu数量的函数的面积和容错性之间的权衡。最后,从实验数据出发,提出了一种分析模型来预测给定设计中有无硬化方案的截面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sensitivity evaluation of TMR-hardened circuits to multiple SEUs induced by alpha particles in commercial SRAM-based FPGAs
We present an experimental analysis of the sensitivity of SRAM-based FPGAs to alpha particles. We study how the different resources inside the FPGA (LUTs, MUXs, PIPs, etc. ) are affected by alpha-induced SEUs, assessing the cross section for the configuration memory cells controlling each of them. We then show two case studies, a chain of FIR filters and a series of soft microcontrollers implemented in the FPGA, measuring the rate of functional interruptions during exposure to a constant flux of alpha particles. The designs are then hardened using triplication with a single final voter, with intermediate voters, and finally including also feedback voters. The robustness of each hardening solution is discussed, analyzing the trade-off between area and fault-tolerance as a function of the number of SEUs in the configuration memory. An analytical model to predict the cross section of a given design with and without hardening solutions is finally proposed, starting from the experimental data.
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