Performance Prediction of GaN HEMTs Using Angelov and Curtice Models

The performance of GaN HEMTs is projected in this paper with experimental evaluation using the Angelov model and the Curtice model of FETs. Two Angelov model parameters (α, λ) and three Curtice model parameters (of α, λ, and β) are used to match the experimental findings of the dc characteristics to articulate and specify their impacts on the linear and saturation zones. A computational comparison between the projected performance has been showcased. Moreover, by comparing the simulated and experimental data for both models, a good match in transconductance and output conductance was observed. In all models, the DC findings of the examined GaN HEMT were very similar.