{"title":"硅纳米线中迁移率的取向和应变依赖关系","authors":"Y. Niquet, C. Delerue, D. Rideau","doi":"10.1109/ULIS.2012.6193354","DOIUrl":null,"url":null,"abstract":"We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor >; 2 for moderate axial strains <; 1%.","PeriodicalId":350544,"journal":{"name":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Orientational and strain dependence of the mobility in silicon nanowires\",\"authors\":\"Y. Niquet, C. Delerue, D. Rideau\",\"doi\":\"10.1109/ULIS.2012.6193354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor >; 2 for moderate axial strains <; 1%.\",\"PeriodicalId\":350544,\"journal\":{\"name\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2012.6193354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2012.6193354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Orientational and strain dependence of the mobility in silicon nanowires
We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor >; 2 for moderate axial strains <; 1%.
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