温度变化对硫腐蚀时间膜牺牲铜带的影响

M. S. A. Khiar, R.C.D. Brown, P. Lewin
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引用次数: 3

摘要

介绍了薄膜铜带在不同温度下受硫腐蚀的特性。利用电子束蒸发器在玻璃基板上沉积了厚度为200nm的铜薄膜。为了增强铜薄膜在玻璃基板上的附着力,在铜蒸发前沉积了厚度为5 nm的钛。选择三种二苯二硫(DBDS)浓度(1)100、(2)250和(3)1000 ppm来模拟不同水平的石油腐蚀性。将薄膜铜带浸入腐蚀性油样中,然后在实验室强制对流炉中分别于120和130℃时效25 h,采用4线法测量薄膜铜带的电阻,监测硫腐蚀导致的铜损失。根据初步结果,温度从120℃升高到130℃,硫腐蚀加速。从测量的电阻值可以看出,由于DBDS击穿引起的腐蚀副产物导致的玻璃基板的铜损失量在较高的温度下更为明显。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Temperature Changes on Tine Film Sacrificial Copper Strips due to Sulfur Corrosion
This paper presents the characteristics of thin film copper strips due to sulfur corrosion at different temperatures. Thin film copper with a layer thickness of 200 nm was deposited onto a glass substrate using an electron beam evaporator. In order to enhance the adhesion of thin film copper on the glass substrate, titanium with a layer thickness of 5 nm was deposited prior to copper evaporation. Three dibenzyl disulfide (DBDS) concentrations were chosen to simulate the different levels of oil corrosiveness: (1) 100, (2) 250, and (3) 1000 ppm. The thin film copper strips were immersed in the corrosive oil samples and then aged in a forced convection laboratory oven at 120 and 130°C for 25 h. The copper loss due to sulfur corrosion was monitored by measuring the resistance of the thin film copper strips using the 4-wire measurement method. Based on the preliminary results, sulfur corrosion is accelerated by increasing the temperature from 120 to 130°C. The amount of copper losses from the glass substrate caused by the corrosive by-products due to the breakdown of DBDS is more pronounced at higher temperature, as evidenced from the measured resistance values.
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