{"title":"不同温度下功率MOSFET导通电阻的比较","authors":"W. Lu, R. Mauriello, K. Sundaram, L. Chow","doi":"10.1109/SECON.1998.673345","DOIUrl":null,"url":null,"abstract":"The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling.","PeriodicalId":281991,"journal":{"name":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Comparison of on-resistance of a power MOSFET by varying temperature\",\"authors\":\"W. Lu, R. Mauriello, K. Sundaram, L. Chow\",\"doi\":\"10.1109/SECON.1998.673345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling.\",\"PeriodicalId\":281991,\"journal\":{\"name\":\"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1998.673345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1998.673345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of on-resistance of a power MOSFET by varying temperature
The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling.
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