重掺杂铬的硒化锌的自旋极化电子和磁性能

S. Syrotyuk
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引用次数: 0

摘要

在第一阶段,通过优化程序找到了掺杂铬原子的ZnCrSe晶体的结构。在第二阶段,用两种方法对该材料的电子特性进行了评估。这里使用的交换相关泛函是基于广义梯度近似(GGA)和混合泛函PBE0。GGA方法为自旋向上的电子提供了金属态,而自旋方向相反的材料ZnCrSe表现为半导体,带隙为2.48 eV。混合泛函方法还为自旋向上的电子态提供了一个无间隙状态,为自旋向下的电子态提供了2.39 eV的禁止间隙值。用两个泛函发现的单位胞的磁矩是相同的,等于4 Bμ(玻尔磁子)。因此,用两个交换相关泛函的计算提供了ZnCrSe材料的半金属性质的预测,这是一个有趣的自旋电子应用的候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The spin-polarized electronic and magnetic properties of zinc selenide heavy doped with chromium
Atthe first stage, the structureof theZnSe crystal doped with chromium atoms (ZnCrSe)has been found by optimization procedure. At the second stage, the electronic properties of this material have been evaluated within the two approaches. The exchange-correlation functionals used here are based on the generalized gradient approximation (GGA) and the hybrid functional PBE0. The GGA approach provides the metallic state for electrons with the spin up, and for opposite spin orientation the material ZnCrSe bahaves as semiconductor, with the band gap of 2.48 eV. The hybrid functional approach also gives a gapless state for a spin up electron states, and for a spin down it provides the forbidden gap value of 2.39 eV. The magnetic moment of the unit cell, found with the two functionals, is the same and equals to 4 Bμ(Bohr magnetons). So, the calculations with the two exchange-correlation functionals provide the prediction of half-metallic properties of the ZnCrSe material, which is an interesting candidate for spintronic applications.
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