应变对FinFETs /D隧穿的影响:MS-EMC研究

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551707

C. Medina-Bailón, C. Sampedro, J. Padilla, A. Godoy, L. Donetti, V. Georgiev, F. Gámiz, A. Asenov

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引用次数: 1

摘要

随着设备尺寸的缩小，使用应变通道作为性能增强器变得特别重要。此外，在输运方向上包含量子效应对于预测未来晶体管的性能是必要的。特别地，源-漏隧道(S/D隧道)在10nm以下的节点中作为缩放限制被提出。在这项工作中，多子带集成蒙特卡罗(MS-EMC)研究了松弛和双轴应变通道finfet中S/D隧穿的影响。

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Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study

As device dimensions are scaled down, the use of strained channels as performance booster becomes of special relevance. Moreover, the inclusion of quantum effects in the transport direction is imperative to predict the performance of future transistors. In particular, Source-to-Drain tunneling (S/D tunneling) is presented as a scaling limit in sub-10nm nodes. In this work, a Multi-Subband Ensemble Monte Carlo (MS-EMC) study of the impact of S/D tunneling in relaxed and biaxially strained channel FinFETs is presented.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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