{"title":"双Ge FinFET结构非易失性存储器的研究","authors":"Chien-Chang Li, M. Yeh, Yao-Jen Lee, Yung-Chun Wu","doi":"10.23919/SNW.2019.8782901","DOIUrl":null,"url":null,"abstract":"A twin FinFET structure non-volatile memory with high mobility germanium channel (Twin Ge FinFET structure NVM) is demonstrated. An extrapolation of the memory window can achieve 10V of VTH at 21V for 10−3s which is large enough for NVM application. And the memory window can be maintained at 1.5V after 103 P/E cycles. In the future, this novel twin Ge FinFET NVM give a new solution of embedded NVM for next-generation Ge-based FinFET MOSFET integrated circuit.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of Twin Ge FinFET Structure Non-Volatile Memory\",\"authors\":\"Chien-Chang Li, M. Yeh, Yao-Jen Lee, Yung-Chun Wu\",\"doi\":\"10.23919/SNW.2019.8782901\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A twin FinFET structure non-volatile memory with high mobility germanium channel (Twin Ge FinFET structure NVM) is demonstrated. An extrapolation of the memory window can achieve 10V of VTH at 21V for 10−3s which is large enough for NVM application. And the memory window can be maintained at 1.5V after 103 P/E cycles. In the future, this novel twin Ge FinFET NVM give a new solution of embedded NVM for next-generation Ge-based FinFET MOSFET integrated circuit.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782901\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
提出了一种具有高迁移率锗通道的双Ge FinFET结构非易失性存储器(twin Ge FinFET structure NVM)。外推的内存窗口可以实现10V的VTH在21V在10−3s，这是足够大的NVM应用。经过103个P/E循环后，记忆窗口可保持在1.5V。在未来，这种新型的双Ge FinFET NVM为下一代基于Ge的FinFET MOSFET集成电路的嵌入式NVM提供了新的解决方案。
Study of Twin Ge FinFET Structure Non-Volatile Memory
A twin FinFET structure non-volatile memory with high mobility germanium channel (Twin Ge FinFET structure NVM) is demonstrated. An extrapolation of the memory window can achieve 10V of VTH at 21V for 10−3s which is large enough for NVM application. And the memory window can be maintained at 1.5V after 103 P/E cycles. In the future, this novel twin Ge FinFET NVM give a new solution of embedded NVM for next-generation Ge-based FinFET MOSFET integrated circuit.
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