一种容错的基于分子的内存体系结构

Yoon-Hwa Choi, Myeong-Hyeon Lee
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引用次数: 2

摘要

本文提出了一种基于分子存储器的容错结构。内存由共享相同地址空间的多个模块设计而成,其中每个模块都被构造为基于分子的交叉条阵列。利用各交叉棒阵列的冗余行和列以及控制变量的适当分配的冗余模块来容忍制造过程中产生的缺陷和正常运行中发生的故障。分子存储器所需的横条面积可以比现有方案更小,同时实现更高的存储器可配置性。广泛的仿真表明,所提出的存储体系结构在很大的缺缺率范围内优于现有的基于分子的冗余存储体系结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A defect-tolerant molecular-based memory architecture
This paper presents a defect-tolerant architecture for molecular-based memories. A memory is designed from multiple modules that share the same address space, where each of the modules is constructed as a molecular-based crossbar array. Redundant rows and columns of each crossbar array and redundant modules with a proper assignment of control variables are utilized to tolerate defects generated during the fabrication process and faults occurring during normal operation. The crossbar area required for the molecular memory can be made smaller than those of existing schemes, while achieving higher memory configurability. An extensive simulation demonstrates that the proposed memory architecture outperforms existing molecular-based redundant memory architectures for a wide range of defect rates.
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