采用全无源噪声整形SAR和VCO ADC的无ota 1-1 MASH ADC

S. T. Chandrasekaran, S. Bhanushali, S. Pietri, A. Sanyal
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引用次数: 3

摘要

我们提出了一种无ota的1-1 MASH ADC,采用全无源噪声整形(FPNS) SAR作为一级,开环VCO ADC作为二级。该工作的关键贡献在于解决了驱动高分辨率NS-SAR的大采样电容的挑战。所提出的结构降低了SAR级的分辨率,并利用FPNS SAR中由于被动电荷共享而产生的残留衰减来线性化VCO。将FPNS SAR与VCO ADC相结合,可在ADC输出处形成VCO和SAR比较器的带内热噪声。此外,我们还演示了一种计算成本低廉的前景级间增益校准算法,用于所提出的ADC架构。该原型ADC功耗为0.16mW,在1.1MHz带宽下SNDR/DR为71.5/75.8dB, walden FoM为23.3fJ/step,是65nm技术中最低的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
OTA-free 1-1 MASH ADC using Fully Passive Noise Shaping SAR & VCO ADC
We present an OTA-free 1-1 MASH ADC utilizing a fully passive noise shaping (FPNS) SAR as first-stage and open-loop VCO ADC as second stage. The key contribution of this work is to address the challenge of driving large sampling capacitor for high resolution NS-SAR. The proposed architecture reduces resolution of SAR stage and leverages residue attenuation due to passive charge sharing in the FPNS SAR to linearize the VCO. Combining an FPNS SAR with a VCO ADC shapes in-band thermal noise of VCO and SAR comparator at ADC output. Additionally, we demonstrate a computationally inexpensive foreground inter-stage gain calibration algorithm for the proposed ADC architecture. The prototype ADC consumes 0.16mW while achieving an SNDR/DR of 71.5/75.8dB over a 1.1MHz bandwidth and walden FoM of 23.3fJ/step which is the lowest in 65nm technology.
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