Low Noise Amplifier for the Wearable IoT Sensing System

Wireless systems and Internet of Things (IoT) sensing applications need Low Noise Amplifiers (LNA). However, a simple design is desirable for wearable IoT applications. In this direction, a single-stage LNA having considerable gain, stability, and noise figure (NF) for wearable IoT applications have been designed. An analysis of gain, noise factor, and stability for various values of gate voltage is performed to determine the utility and performance. The transistor used here is a Low Noise Gallium Arsenide FET and lumped components are used for matching at input and output side. It is found that the proposed LNA has 15.689 dB forward gain, a bandwidth of 1600 MHz and 0.672 dB Noise Figure at frequency 2.4 GHz that can be used for sensors operating in LS bands of frequencies. The LNA has been designed with fewer components in order to make it suitable for wearable IoT.