技术对dram中中子诱导效应的影响:比较研究

2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) Pub Date : 2021-06-28 DOI:10.1109/DTIS53253.2021.9505143

Lucas Matana Luza, D. Söderström, André Martins Pio de Mattos, E. Bezerra, C. Cazzaniga, M. Kastriotou, C. Poivey, L. Dilillo

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引用次数: 3

摘要

研究了同步动态随机存取存储器对中子辐照的响应。在英国Rutherford Appleton实验室的ChipIr光束线上，对具有不同节点尺寸(63,72和110 nm)的三代相同器件进行了类大气中子谱的表征。这些记忆在较低的刷新率下进行测试，以暴露更多的单一事件干扰，并在测试设施中由专门为此类研究开发的电路板提供的类似条件下进行测试。该板还被设计为纳米卫星有效载荷，以便进行类似的测试。对中子诱发的失效进行了研究和表征，出现了单钻头镦钻和卡钻现象。每种类型事件和技术节点的横截面表明，110 nm模型对中子诱导的单事件效应比其他模型更敏感。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Technology Impact on Neutron-Induced Effects in SDRAMs: A Comparative Study

This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studied and characterized, presenting the occurrence of single-bit upsets and stuck bits. The cross sections for each type of event and technology node show that the 110 nm model is more sensitive to neutron-induced single-event effects than the other models.

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来源期刊

2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)

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